TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1923
High Voltage Switching Applications
2SA1923
Unit: mm
• Hig...
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SA1923
High Voltage Switching Applications
2SA1923
Unit: mm
High voltage: VCEO = −400 V Low saturation voltage: VCE (sat) = −1 V (max)
(IC = −100 mA, IB = −10 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
−400 −400
−7 −0.5 −1 −0.25
1 10 150 −55 to 150
Unit V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2005-02-01
2SA1923
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
fT Cob
VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max
― ― −400 140 140 ― ― ― ―
― ― ― ― ― −0.4 −0.76 35 18
−10 −1 ― 450 400 −1.0 −0.9 ― ―
Unit µA µA V
V V MHz pF
Turn-on time Switching time Storage time
Fall time
ton 20 µs INPUT IB1 OUTPUT ― 0.2 ―
IB1 2 kΩ
tst...