High Speed Power Switching
Preliminary Datasheet
RJK4002DPH-E0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-state resistance R...
Description
Preliminary Datasheet
RJK4002DPH-E0
400V - 3A - MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching R07DS1037EJ0100 Rev.1.00 Mar 18, 2013
Outline
RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251)
4 1. 2. 3. 4. Gate Drain Source Drain
D
G
12
3
S
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. STch = 25C, Tch 150C 3. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse)Note1 IAP Note2 EAR Note2 Pch Note3 ch-c Tch Tstg Value 400 30 3 6 3 6 2.5 0.357 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W C/W C C
R07DS1037EJ0100 Rev.1.00 Mar 18, 2013
Page 1 of 6
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RJK4002DPH-E0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate t...
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