SNN01Z60Q

SN NN01Z Z60Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures Logic level l gate drive e Max. RDS(ON a VGS = 10V V, ID = 0.5A N) = 135mΩ at Low RDS(on) provides hi igher efficie ency ESD protec cted: 1000V V (HBM ±500 0V) Halogen fr ree and RoH HS complian nt device D G Package SOT-223 Or rdering In nformatio on Part Num mber SNN01Z Z60Q Marking g SNN01Z6 60 D S SOT-223 arking Inf formation n Ma Column 1: 1 Device Cod de Column 2: 2 Production n Information e.g.) YW WW -. Y: Year Y Code -. WW W: Week Code e SNN0 01Z60 YWW bsolute maximum m ratings (T TC=25°C unles ss otherwise noted) n Ab Characteristic Drain-source voltage v G Gate-source v voltage Drain current (DC) * Drain current (Pulsed) * (Note 2) Symb bol VDS SS VGS SS ID Tc=25°C Tc=100°C IDM M EAS S IAR R EAR R PD TJ Tst tg Rati ing 60 0 ±2 20 1 0.6 63 4 35 5 1 0.1 18 1.8 15 50 -55~150 Unit V V A A A mJ A mJ W °C °C Si ingle pulsed avalanche energy e Re epetitive ava alanche curr rent (Note 1) Re epetitive ava alanche energy (Note 1) Po ower dissipa ation Ju unction temp perature St torage temp perature rang ge * Limited L only maximum m junc ction tempera ature v. date: 24-S SEP-12 Rev KS SD-T5A014-0 000 www.auk.co o.kr 1 of o 8 Free Datasheet http://www.datasheet4u.com/ SNN01Z60Q Thermal Characteristics Characteristic Thermal resistance, junction to ambient * When mounted on the minimum pad size recommended (PCB). Symbol Rth(j-a) Rating Ma...