TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1934
High-Current Switching Applications DC-DC Converter ...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1934
High-Current Switching Applications DC-DC Converter Applications
2SA1934
Unit: mm
Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC5176
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
Rating
−100 −80 −7 −5 −8 −1 1.8 150 −55 to 150
Unit V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
1 2004-07-07
2SA1934
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −100 V, IE = 0
IEBO
VEB = −7 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1) (Note)
VCE = −1 V, IC = −1 A
hFE (2) VCE (sat) VBE (sat)
fT Cob
VCE = −1 V, IC = −3 A IC = −3 A, IB = −0.15 A IC = −3 A, IB = −0.15 A VCE = −4 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― −1 µA
― ― −1 µA
−80 ―
―
V
70 ― 240
40 ― ―
― −0.2 −0.4
V
― −0.9 −1.2
V
― 60 ― MHz
― 200 ―
pF
Turn-on time
ton
20 µs
Input IB2
Output
―
...