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2SA1940 Dataheets PDF



Part Number 2SA1940
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon PNP Transistor
Datasheet 2SA1940 Datasheet2SA1940 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications 2SA1940 Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −120 −1.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications 2SA1940 Unit: mm • Complementary to 2SC5197 • Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −120 −120 −5 −8 −0.8 80 150 −55 to 150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −120 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −50 mA, IB = 0 hFE (1) (Note) VCE = −5 V, IC = −1 A hFE (2) VCE = −5 V, IC = −4 A VCE (sat) VBE fT Cob IC = −6 A, IB = −0.6 A VCE = −5 V, IC = −4 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Min ― ― −120 Typ. ― ― ― Max −5.0 −5.0 ― Unit µA µA V 55 ― 160 35 75 ― ― −0.80 −2.0 V ― −0.97 −1.5 V ― 30 ― MHz ― 260 ― pF 1 2004-07-07 Marking TOSHIBA A1940 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2SA1940 2 2004-07-07 Collector current IC (A) −10 −8 −6 −4 −2 0 0 IC – VCE −300 −250 −200 −150 Common emitter Tc = 25°C −100 −50 −40 −30 −20 IB = −10 mA −2 −4 −6 −8 Collector-emitter voltage VCE (V) −10 Collector current IC (A) 2SA1940 IC – VBE −10 −8 −6 Tc = 100°C 25°C −4 −25°C −2 Common emitter VCE = −5 V 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC −10 −1 Tc = 25°C −0.1 Tc = 100°C Tc = −25°C −0.01 −0.01 −0.1 Common emitter IC/IB = 10 −1 −10 −100 Collector current IC (A) Safe Operating Area −50 −30 IC max (pulsed)* −10 IC max (continuous) −5 −3 DC operation Tc = 25°C −1 1 ms* 10 ms* 100 ms* −0.5 −0.3 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated −0.1 linearly with increase in temperature. −0.05 −2 −3 −10 −30 VCEO max −100 −300 −1000 Collector-emitter voltage VCE (V) DC current gain hFE 1000 hFE – IC Tc = 100°C Tc = 25°C 100 Tc = −25°C 10 1 −0.01 Common emitter VCE = −5 V −0.1 −1 −10 Collector current IC (A) 3 2004-07-07 Collector current IC (A) 2SA1940 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result f.


2SA1939 2SA1940 2SA1941


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