PBSS4230PANP

PBSS4230PANP 14 December 2012 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC Reduced Printed-Circuit Board (PCB) requirements High efficiency due to less heat generation AEC-Q101 qualified 3. Applications Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Symbol VCEO IC ICM TR1 (NPN) RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C 145 mΩ Quick reference data Parameter collector-emitter voltage collector current peak collector current single pulse; tp ≤ 1 ms Conditions open base Min Typ Max 30 2 3 Unit V A A Per transistor; for the PNP transistor with negative polarity Scan or click this QR code to view the latest information for this product Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Symbol TR2 (PNP) RCEsat Parameter collector-emitter saturation resistance Conditions IC = -1 A; IB = -100 ...