UPA2630T1R

Data Sheet μPA2630T1R P-CHANNEL MOSFET –12 V, –7.0 A, 28 mΩ Description The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 Features –1.8V drive available Low on-state resistance ⎯ RDS (on)1 = 28 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A) ⎯ RDS (on)2 = 35 mΩ MAX. (VGS = –2.5 V, ID = –3.5 A) ⎯ RDS (on)2 = 59 mΩ MAX. (VGS = –1.8 V, ID = –3.5 A) Built-in gate protection diode Lead-free and Halogen-free 6pinHUSON2020 Ordering Information Part Number Package 6pinHUSON2020 Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) μPA2630T1R-E2-AX∗1 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (5 s) ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch TSTG Ratings –12 m8 m7.0 m28 2.5 150 –55 to +150 Unit V V A A W °C °C Channel Temperature Storage Temperature Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt R07DS0990EJ0100 Rev.1.00 Dec 27, 2012 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ μPA2630T1R Electrical Characteristics (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-of...