UPA2690T1R

Data Sheet μPA2690T1R COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 Features N-channel 2.5V, P-channel 1.8V drive available Low on-state resistance N-channel ⎯ RDS (on)1 = 42 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) ⎯ RDS (on)2 = 62 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) P-channel ⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A) ⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A) ⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A) Built-in gate protection diode Lead-free and Halogen-free 6pinHUSON2020(Dual) Ordering Information Part Number Package 6pinHUSON2020(Dual) Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) μPA2690T1R-E2-AX∗1 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (1 unit, 5 s) ∗ Total Power Dissipation (2 units, 5 s) ∗2 2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG N-CHANNEL 20 ±12 ±4.0 ±16 P-CHANNEL –20 m10 m3.0 m12 Unit V V A A W W °C °C Channel Temperature Storage Temperature Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epo...