Preliminary Data Sheet
μ PA2762UGR
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0011EJ0100 Rev.1.00 Jun 01, 2010
The μ PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer.
Features
Low on-state resistance ⎯ RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 12 A) ⎯ RDS(on)2 = 22 mΩ MAX. (VGS = 4.5...
