UPA2764T1A

Data Sheet μPA2764T1A N-channel MOSFET 30 V , 130 A , 1.10 mΩ Description The μ PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. R07DS0881EJ0102 Rev.1.02 Nov 28, 2012 Features VDSS = 30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 1.10 mΩ MAX. (VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 2.45 mΩ MAX. (VGS = 4.5 V, ID = 35 A) 4.5 V Gate-drive available Thin type surface mount package with heat spreader Halogen free 8-pin HVSON(6051) Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.1 g TYP. μ PA2764T1A-E2-AY∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗ Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 30 ±20 ±130 ±280 1.5 4.6 83 150 −55 to +150 50 250 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case(Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 1.5 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch =...