UPA2806

Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz) Built-in gate protection diode Thin type surface mount package with heat spreader (8-pin HVSON) RoHS Compliant Ordering Information Part No. LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) ∗2 Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 100 ±20 ±21 ±31 1.5 3.8 52 150 −55 to +150 14.3 20.4 Unit V V A A W W W °C °C A mJ Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH Thermal Resistance Ch...