UPA2812T1L

Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0762EJ0101 Rev.1.01 May 28, 2013 Features VDSS = −30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = −10 V, ID = −30 A) 4.5 V Gate-drive available Small & thin type surface mount package with heat spreader Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2812T1L-E2-AT Note: ∗ *1 Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 m20 m30 m120 1.5 3.8 52 150 −55 to +150 25 62 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 2.4 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0....