RJP3066DPK

April 2010 Renesas Electronics Power MOSFETs and IGBT for PDP Merits Power MOSFET Low ON resistance Low Qg High avalanche tolerance IGBT Low VCE (sat) High-speed switching PDP System PDP trends Scan IC Power device High breakdown voltage Low resistance High speed switching Wide MOSFET line-ups High Speed IGBT Y Sustain circuit Panel X Sustain circuit High Intensity High pressure Gas High Efficiency Addressing IC Optimum FET Low Cost TV/PC Signal PDP Signal processing Timing control Power supply IGBT Product Lineup Power MOSFET P/N H7N1005LS H7N1004LS H5N2301PF H5N2306PF H5N2305PF H5N2509P H5N2503P H5N3004P H5N3007LS H5N3003P H5N3504P VDSS (V) 100 100 230 230 230 250 250 300 300 300 350 Maximum Rating ID (A) 15 30 25 30 35 30 50 25 25 40 20 VGS (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 Electrical Characteristics VGS(off) RDS(on) typ(V) typ(mΩ） 2.0 85 2.0 25 3.5 65 3.5 48 3.5 30 3.5 53 3.5 40 3.5 75 2.8 120 3.5 60 3.5 100 Package LDPAK LDPAK TO-3PFM TO-3PFM TO-3PFM TO-3PFM TO-3P TO-3P LDPAK TO-3P TO-3P IGBT (High-speed type) P/N GN4030V5AB GN6030V5AB RJP3053DPP RJP3063DPP RJP3054DPP RJP3064DPP RJP3055DPP RJP3065DPP RJP4065DPP RJP2557DPK RJP3056DPK RJP3057DPK RJP3066DPK RJP3067DPK RJP4067DPK VCES (V) 400 600 300 300 300 300 300 300 400 270 300 300 300 300 400 Maximum Rating IC (A) 30 30 30 30 35 35 40 40 40 50 45 50 45 50 50 VGE (V) ±20 ±20 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 ±30 Electrical Charcteristics VCE(sat) tf (V)　 typ (μS) 　ｔｙｐ 1.5 0.12 1.7 ...