Ordering number:5230
PNP Epitaxial Planar Silicon Transistor
2SA1963
High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed...
Ordering number:5230
PNP Epitaxial Planar Silicon
Transistor
2SA1963
High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications
Features
· Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.
Package Dimensions
unit:mm 2018B
[2SA1963]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain
ICBO IEBO hFE
fT
Cob Cre | S2le |2(1)
| S2le |2(2)
Noise Figure
NF
* : The 2SA1963 is classified by 10mA hFE as follows :
20 1 50
40 2 80
60
VCB=–10V, IE=0
VEB=–1V, IC=0
VCE=–5V, IC=–10mA
VCE=–5V, IC=–10mA
VCB=–10V, f=1MHz
VCB=–10V, f=1MHz
VCE=–5V, IC=–10mA, f=1GHz
VCE=–2V, IC=–3mA, f=1GHz
VCE=–5V, IC=–5mA, f=1GHz Marking : MS
3 120
hFE ranks : 1, 2, 3
1 : Base 2 : Emitter 3 : Collector
SANYO : CP
Ratings –12 –8 –2 –50 200 150
–55 to +150
Unit V V V mA
mW ˚C ˚C
Ratings min typ
20* 35 0.8 0.55 79 6.5 1.5
max –1.0 –1.0 120* 1.3
3.0
Unit
µA µA
GHz pF pF dB dB dB
Any and all SANYO products described or contained herein do not have specifications tha...
