2SA1969

Ordering number:5098 PNP Epitaxial Planar Silicon Transistor 2SA1969 High-Frequency Medium-Output Amplifier,MediumCurrent Ultrahigh-Speed Switching Applications Features · High fT (fT=1.7GHz typ). · Large current capacity (IC=–400mA). Package Dimensions unit:mm 2038A [2SA1969] 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Mounted on ceramic board (250mm2×0.8mm) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : AQ Symbol Conditions ICBO IEBO hFE1 hFE2 fT Cob Cre VCE(sat) VBE(sat) VCB=–10V, IE=0 VEB=–1V, IC=0 VCE=–5V, IC=–50mA VCE=–5V, IC=–400mA VCE=–5V, IC=–100mA VCB=–10V, f=1MHz VCB=–10V, f=1MHz IC=–200mA, IB=–20mA IC=–200mA, IB=–20mA SANYO : PCP (Bottom view) Ratings –10 –10 –2 –400 –800 1.3 150 –55 to +150 Unit V V V mA mA W ˚C ˚C Ratings min typ 20 5 1.7 4.7 3.9 –0.4 –0.9 max –1.0 –10 120 7.0 –1.0 –1.2 Unit µA µA GHz pF pF V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require e...