2SA1980E

Semiconductor 2SA1980E PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343E Ordering Information Type NO. 2SA1980E Marking A : hFE rank Package Code SOT-523 Outline Dimensions 1.5~1.7 0.7~0.9 unit : mm 1 1.00 BSC 1.5~1.7 3 0.2~0.3 2 0.15 Min. 0~0.1 0.6~0.8 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector KST-4001-002 1 2SA1980E Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -50 -5 -150 150 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10KΩ Min. Typ. Max. -50 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10 Unit V V V µA µA V MHz pF dB *: hFE rank ...