IRFML8244TRPBF

Product specification IRFML8244TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) 25 ± 20 24 41 V V m m 6  *  HEXFET® Power MOSFET  ' Micro3TM (SOT-23) IRFML8244TRPbF RDS(on) max (@VGS = 4.5V) Application(s) Load/ System Switch Features and Benefits Features Low RDS(on) (  24m) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Benefits Lower switching losses Multi-vendor compatibility results in Easier manufacturing Environmentally friendly  Increased reliability Absolute Maximum Ratings Symbol VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 25 5.8 4.6 24 1.25 0.80 0.01 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Symbol RJA RJA Parameter Junction-to-Ambient e Typ. ––– ––– Max. 100 99 Units °C/W Junction-to-Ambient (t<10s) f http://www.twtysemi.com [email protected] 1 of 2 Free Datasheet http://www.datasheet4u.com/ Product specification IRFML8244TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 25 ––– ––– ––– 1.35 ––– ––– ...