KML0D3P20TV

SEMICONDUCTOR TECHNICAL DATA General Description It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. KML0D3P20TV P-Ch Trench MOSFET FEATURES VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7 @ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V _ + _ + _ + _ + _ + _ + _ + MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC @TA=25 Drain Current DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient IDP IS P D* Tj Tstg RthJA* SYMBOL VDSS VGSS ID* -210 mA -650 125 170 150 -55 150 730 /W mW P-Ch -20 6 -300 UNIT V V Note 1) *Surface Mounted on FR4 Board, t 5sec 2013. 2. 25 Revision No : O 1/2 Free Datasheet http://www.datasheet4u.com/ KML0D3P20TV ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage BVDSS IDSS IGSS Vth ID= -250 A, VGS=0V VGS=0V, VDS= -16V VGS= 4.5V, VDS=0V -20 -0.45 -0.3 1.0 0.80 1.20 1.80 0.4 -0.8 -100 2.0 -1.0 1.20 1.60 2.70 -1.2 S V V nA A V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID= -250 A VGS= -4.5V, ID= -300mA Drain-Source ON Resistance RDS(ON)* VGS= -2.5V, ID= -250mA VGS= -1.8V, ID= -150mA Forward Transconductance Source-Drain Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn...