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KP11N60F Dataheets PDF



Part Number KP11N60F
Manufacturers KEC
Logo KEC
Description N-Channel MOSFET
Datasheet KP11N60F DatasheetKP11N60F Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N .

  KP11N60F   KP11N60F



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SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) Q H SYMBOL VDSS VGSS ID RATING 600 30 11* 6.9* UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + K TO-220IS (1) A IDP EAS EAR dv/dt PD 24* 195 4.0 4.5 34.7 0.28 mJ mJ V/ns W W/ Derate above 25 Tj Tstg Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 150 -55 150 RthJC RthJA 3.6 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2013. 4. 24 Revision No : 0 1/6 Free Datasheet http://www.datasheet4u.com/ KP11N60F ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=600V, VGS=0V VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=5.5A 600 2.0 0.6 0.33 10 4.0 100 0.38 V nA V V/ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS


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