Document
SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=-0.5 High Speed. Small Package. Enhancement-Mode.
KTJ6131V
P CHANNEL MOS FIELD EFFECT TRANSISTOR
E B
-1.5V.
2
1
3
P
P
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
)
SYMBOL VDS VGSS ID PD Tch Tstg RATING -30 20 -50 100 150 -55 150 UNIT V V mA mW
C J
DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 0.5 + C _ 0.05 D 0.3 + _ 0.05 E 1.2 + _ 0.05 0.8 + G 0.40 H _ 0.05 0.12 + J _ 0.05 K 0.2 + P 5
A
G
H
K
D
1. SOURCE 2. GATE 3. DRAIN
VSM
EQUIVALENT CIRCUIT
D
Marking
Type Name
M1
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-on Time Switching Time Turn-off Time toff
)
TEST CONDITION VGS= 16V, VDS=0V MIN. -30 -0.5 15 VDD=-3V, ID=-10mA, VGS=0 -2.5V TYP. 20 10.4 2.8 8.4 0.15 0.13 MAX. 1 -1 -1.5 40 pF pF pF S S UNIT A V A V mS
SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton
ID=-100 A, VGS=0V VDS=-30V, VGS=0V VDS=-3V, ID=-0.1mA VDS=-3V, ID=-10mA ID=-10mA, VGS=-2.5V VDS=-3V, VGS=0V, f=1MHz VDS=-3V, VGS=0V, f=1MHz VDS=-3V, VGS=0V, f=1MHz
2011. 7. 12
Revision No : 0
1/3
Free Datasheet http://www.datasheet4u.com/
KTJ6131V
2011. 7. 12
Revision No : 0
2/3
Free Datasheet http://www.datasheet4u.com/
KTJ6131V
2011. 7. 12
Revision No : 0
3/3
Free Datasheet http://www.datasheet4u.com/
.