KU045N10P

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 150A Drain-Source ON Resistance : RDS(ON)=4.5m (Max.) @VGS = 10V KU045N10P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID 94.9 IDP EAS EAR dv/dt PD 400* 860 8.8 4.5 192 1.54 Tj Tstg 150 -55 ~ 150 mJ mJ V/ns W W/ A RATING 100 20 150 UNIT V V Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.65 62.5 /W /W * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature PIN CONNECTION 2012. 5. 23 Revision No : 0 1/7 Free Datasheet http://www.datasheet4u.com/ KU045N10P ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate ...