SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION. FEATURES
Recommended for 75W Audio Frequency Amplifier Ou...
SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION. FEATURES
Recommended for 75W Audio Frequency Amplifier Output Stage. Icmax:25A.
D E A N O
TIP35CA
TRIPLE DIFFUSED
NPN TRANSISTOR
Q
B K
F
H
Complementary to TIP36CA.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 )
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 25 5.0 125 150 -55 150 UNIT
d
M
P
P
T
V V V
1. BASE
1 2 3
DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T
C J I G
A A W
2. COLLECTOR (HEAT SINK) 3. EMITTER
TO-3P(N)-E
Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-emitter Breakdown Voltage DC Current Gain
)
TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1.5A VCE=4V, IC=15A IC=15A, IB=1.5A IC=25A, IB=5.0A VCE=5V, IC=5A VCE=5V, IC=1A MIN. 100 55 15 3.0 TYP. MAX. 10 10 160 1.8 V 4.0 1.5 V MHz UNIT A A V
SYMBOL ICBO IEBO V(BR)CEO hFE(1) (Note) hFE(2) VCE(sat)(1)
Collector-Emitter Saturation Voltage VCE(sat)(2) Base-Emitter Voltage Tran...
