2SD526

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION ¡¤With TO-220C package ¡¤Complement to type 2SB596 ¡¤Good linearity of h FE APPLICATIONS ¡¤Power amplifier applications ¡¤Recommend for 20 ¡«25W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ¡¤ Absolute maximum ratings(Ta=25¡æ ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 4 0.4 30 150 -55~150 ¡æ ¡æ UNIT V V V A A W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=3 A;IB=0.3 A IC=3A ; VCE=5V VCB=80V ;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0; VCB=10V;f=1MHz 40 15 8 90 MIN 80 TYP. 2SD526 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V 1.5 1.5 30 100 240 ¦Ì ¦Ì V V A A MHz pF ‹ hFE-1 classifications R O 70-140 Y 120-240 40-80 ...