2SA2049

Transistor 2SA2049 Medium power transistor (−30V, −2.0A) 2SA2049 !Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2.0A) 2) Low saturation voltage, typically (Typ. : −250mV at IC = −1.0A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5731 !Applications Small signal low frequency amplifier High speed switching !External dimensions (Units : mm) MPT3 4.0 1.0 2.5 (1) (2) (3) 0.5 3.0 1.5 1.5 0.4 0.4 0.4 0.5 1.5 1.6 4.5 (1)Base (2)Collector (3)Emitter Each lead has same dimensions Abbreviated symbol : UX !Structure PNP Silicon epitaxial planar transistor !Packaging specifications Type Package Code Basic ordering unit (pieces) 2SA2049 Taping T100 1000 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP Power dissipation PC Junction temperature Tj Range of storage temperature Tstg ∗1 Pw=100ms *2 Mounted on a 40×40×0.7 (mm) ceramic substrate Limits −30 −30 −6 −2.0 −4.0 500 2.0 150 −55~+150 Unit V V V A A ∗1 mW W ∗2 °C °C 1/3 Transistor 2SA2049 !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO −30 − − V IC= −100µA Collector-emitter breakdown voltage BVCEO −30 − − V IC= −1mA Emitter-base breakdown voltage BVEBO −6 − − V IE= −100µA Collector cut-off current ICBO − − −1.0 µA VCB= −20V Emitter cut-o...