RT550PD

Power Transistor Product Features High Output Power P1dB = 40dBm(typ)@2.3GHz High Efficiency High Power Gain G1dB = 10dB(typ) @2.3GHz High Linearity Hermetically sealed package Competitive Price RT550PD Application Repeater RF Sub-Systems Base Station Converter MMDS Package Type : WP-22 Description The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz. Absolute Maximum Ratings Parameter Drain - Source Voltage Gate - Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol Vds Vgs Pt Tstg Tch Rating +12 -5V~0V 37 -65 ~ +200 175 Unit V V W ℃ ℃ Electrical Characteristics (Ta=+25℃) Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Output Power @ 1dB G.C.P Linear Power Gain Power added efficiency @ 1dB Thermal Resistance (Channel to Case) Symbol Idss gm Vp Bvgs Bvgd P1dB GLP ηadd Rth Test Conditions Vds=3V, Vgs=0V Vds=3V, Ids=3600mA Vds=3v, Ids=360mA Min 5000 Typ 3300 Max 6700 Unit mA mS -1.6 -20 -20 -1.9 -3.5 -25 -25 V V V dBm dB % Vds=9V, Id=2.4A F=2.3GHz 39 40 10 40 4.0 4.5 ℃/W ▪ Tel : 82-31-250-5011 ▪ [email protected] ▪ All specifications may change without notice. ▪ Version 5.2 Free Datasheet http://www.datasheet4u.com/ Power Transistor Type:WP-22 RT550PD Pin Map Pin1 Gate Pin2 Drain RFHIC Corporation (RFHIC) reserves the right to make changes to any products herein or to discontinue any product ...