2SC1870

isc Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·High switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 3 A PD Total Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W 2SC1870 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0 V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 V(BR)EBO Emitter-base breakdown voltag IE=1mA ; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-emitter Saturation Voltage IC= 5A ; IB= 1A ICBO Collector Cutoff Current VCE=300V; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 10A ; VCE= 5V 2SC1870 MIN MAX UNIT 250 V 300 V 7 V 1.0 V 1.5 V 0.1 mA 0.1 mA 15 Notice： ISC reserves the rights to make changes of the content herein the datasheet ...