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2SC1875 Dataheets PDF



Part Number 2SC1875
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistors
Datasheet 2SC1875 Datasheet2SC1875 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1875 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Volta.

  2SC1875   2SC1875



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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1875 DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 3.5 A 50 W -65~150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Rresistance,Junction to Case 2.5 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1875 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A ICBO Collector Cutoff Current VCB= 1000V, IE= 0 ICEO Collector Cutoff Current VCE= 500V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC=0.5A; VCE= 10V hFE-2 DC Current Gain IC=2A; VCE= 10V MIN TYP MAX UNIT 500 V 1.0 V 1.2 V 20 uA 1.0 mA 20 uA 10 35 5 25 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website: www.iscsemi.com 2 isc & iscsemi is registered trademark .


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