P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6679BGP-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fas...
Description
AP6679BGP-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-30V 9mΩ -63A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters. G
D S
TO-220(P)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -30 +20 -63 -40 -240 54.3 2 -55 to 150 -55 to 150
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.3 62 Units ℃/W ℃/W 1 201007141
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP6679BGP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Condit...
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