N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6680CGYT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Size & Lower Pro...
Description
AP6680CGYT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
D
30V 9mΩ 15A
S
Description
AP6680C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S S S G
D
D D
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 15 12 50 3.13 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Continuous Drain Current Total Power Dissipation
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient 3 Value 5 40 Unit ℃/W ℃/W 1 201206211
Data and specifications subject to change without notice
Free Datasheet http://www.datasheet4u.com/
AP6680CGYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Q...
Similar Datasheet