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H5TC2G43BFR-xxA Dataheets PDF



Part Number H5TC2G43BFR-xxA
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description 2Gb DDR3L SDRAM
Datasheet H5TC2G43BFR-xxA DatasheetH5TC2G43BFR-xxA Datasheet (PDF)

2Gb DDR3L SDRAM 2Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TC2G43BFR-xxA H5TC2G83BFR-xxA * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Feb. 2010 1 Free Datasheet http://www.datasheet4u.com/ Revision History Revision No. 0.1 0.2 History Initial Release Added IDD Specification Draft Date Dec. 2009 Feb. 2010 Remark Rev. 0.2 / Feb. 2010 2 Free Datasheet http://www.datasheet4u.com/ Description The H5TC2G43BFR-xxA, H5TC.

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2Gb DDR3L SDRAM 2Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant) H5TC2G43BFR-xxA H5TC2G83BFR-xxA * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Feb. 2010 1 Free Datasheet http://www.datasheet4u.com/ Revision History Revision No. 0.1 0.2 History Initial Release Added IDD Specification Draft Date Dec. 2009 Feb. 2010 Remark Rev. 0.2 / Feb. 2010 2 Free Datasheet http://www.datasheet4u.com/ Description The H5TC2G43BFR-xxA, H5TC2G83BFR-xxA and H5TC2G63BFR-xxA are a 2Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) Hynix 2Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. Device Features and Ordering Information FEATURES • VDD=VDDQ=1.35V + 0.100 / - 0.067V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock • Programmable CAS latency 6, 7, 8, 9, 10 and (11) supported • Programmable additive latency 0, CL-1, and CL-2 supported • Programmable CAS Write latency (CWL) = 5, 6, 7, 8 • Programmable burst length 4/8 with both nibble sequential and interleave mode • BL switch on the fly • 8banks • Average Refresh Cycle (Tcase of 0 oC~ 95 oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC • Auto Self Refresh supported • JEDEC standard 82ball FBGA(x4/x8)Driver strength selected by EMRS • Dynamic On Die Termination supported • Asynchronous RESET pin supported • ZQ calibration supported • TDQS (Termination Data Strobe) supported (x8 only) • Write Levelization supported • 8 bit pre-fetch * This product in compliance with the RoHS directive. Rev. 0.2 / Feb. 2010 3 Free Datasheet http://www.datasheet4u.com/ ORDERING INFORMATION Part No. H5TC2G43BFR-*xxA H5TC2G83BFR-*xxA Configuration 512M x 4 256M x 8 Package 82ball FBGA OPERATING FREQUENCY Speed Grade (Marking) -G7 -H9 -PB Frequency [MHz] CL5 CL6 O O O CL7 O O O CL8 O O O O O O O O O O CL9 CL10 CL11 CL12 CL13 Remark (CL-tRCD-tRP) DDR3-1066 7-7-7 DDR3-1333 9-9-9 DDR3-1600 11-11-11 * xx means Speed Bin Grade Rev. 0.2 / Feb. 2010 4 Free Datasheet http://www.datasheet4u.com/ Package Ballout/Mechanical Dimension x4 Package Ball out (Top view): 82ball FBGA Package 1 A B C D E F G H J K L M N NC 1 NC 2 VSS VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 2 3 VDD VSSQ DQ2 NF VDDQ VSS VDD CS BA0 A3 A5 A7 RESET 3 4 NC DQ0 DQS DQS NF RAS CAS WE BA2 A0 A2 A9 A13 4 5 6 7 5 6 7 8 NF DM DQ1 VDD NF CK CK A10/AP NC A12/BC A1 A11 A14 8 9 VSS VSSQ DQ3 VSS NF VSS VDD ZQ VREFCA BA1 A4 A6 A8 9 10 VDD VDDQ VSSQ VSSQ VDDQ NC CKE NC VSS VDD VSS VDD VSS 10 NC 11 11 NC A B C D E F G H J K L M N Note: NF (No Function) - This is applied to balls only used in x4 configuration. 1 2 3 4 A B C D E F G H J K L M N 8 9 10 11 (Top View: See the balls through the Package) Populated ball Ball not populated Rev. 0.2 / Feb. 2010 5 Free Datasheet http://www.datasheet4u.com/ x8 Package Ball out (Top view): 82ball FBGA Package 1 A B C D E F G H J K L M N NC 1 NC 2 VSS VSS VDDQ VSSQ VREFDQ NC ODT NC VSS VDD VSS VDD VSS 2 3 VDD VSSQ DQ2 DQ6 VDDQ VSS VDD CS BA0 A3 A5 A7 RESET 3 4 NC DQ0 DQS DQS DQ4 RAS CAS WE BA2 A0 A2 A9 A13 4 5 6 7 5 6 7 8 NF/TDQS DM/TDQS DQ1 VDD DQ7 CK CK A10/AP NC A12/BC A1 A11 A14 8 9 VSS VSSQ DQ3 VSS DQ5 VSS VDD ZQ VREFCA BA1 A4 A6 A8 9 10 VDD VDDQ VSSQ VSSQ VDDQ NC CKE NC VSS VDD VSS VDD VSS 10 NC 11 11 NC A B C D E F G H J K L M N 1 2 3 4 A B C D E F G H J K L M N 8 9 10 11 (Top View: See the balls through the Package) Populated ball Ball not populated Rev. 0.2 / Feb. 2010 6 Free Datasheet http://www.datasheet4u.com/ Pin Functional Description Symbol CK, CK Type Input Function Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is asynchronous for Self-Refresh exit. Aft.


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