DatasheetsPDF.com

2N2857CSM Dataheets PDF



Part Number 2N2857CSM
Manufacturers Seme LAB
Logo Seme LAB
Description HIGH FREQUENCY NPN TRANSISTOR
Datasheet 2N2857CSM Datasheet2N2857CSM Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2857CSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 2.54 ± 0.13 (0.10 ± 0.005) 3 0.76 ± 0.15 (0.03 ± 0.006) 2 1 • CECC SCREENING OPTIONS 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) A 1.4.

  2N2857CSM   2N2857CSM


Document
LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N2857CSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 2.54 ± 0.13 (0.10 ± 0.005) 3 0.76 ± 0.15 (0.03 ± 0.006) 2 1 • CECC SCREENING OPTIONS 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.31 rad. (0.012) A 1.40 (0.055) max. 1.02 ± 0.10 (0.04 ± 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2857 for high reliability applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range 30V 15V 2.5V 40mA 200mW 1.14mW / °C 300mW 1.72mW / °C –65 to +200°C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE ICES NF hfe | hfe | Ccb Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Collector – Emitter Cut-off Current Noise Figure Small Signal Current Gain Magnitude of hfe Collector – Base Feedback Capacitance Gpe rb’Cc Small Signal Power Gain Collector – Base Time Constant SEME 2N2857CSM Test Conditions IC = 1µA IE = 10µA VCB = 15V IE = 0 IC = 10mA IB = 1mA VCE = 1V IC = 3mA VCB = 16V VCE = 6V f = 450MHz VCE = 6V VCE = 6V f = 100MHz VCB = 10V VCE = 6V f = 450MHz VCE = 6V f = 31.9MHz IE = 2mA IE = 0 IC = 1.50mA f = 0.1 to 1 MHz TA = 150°C IB = 0 IC = 1.5mA RG = 50Ω IC = 2mA IC = 5mA TA = –55°C IE = 0 IB = 0 IC = 0 Min. 30 15 2.5 Typ. Max. Unit V 50 1 0.4 Collector – Emitter Breakdown Voltage IC = 3mA µA V — 0.5 30 10 1 100 4.5 50 10 220 21 1 12.5 4.0 21 15 nA dB — — pF dB ps Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/95 .


2SA2084 2N2857CSM 2N2880


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)