Document
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N2857CSM
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10 (0.02 ± 0.004)
0.31 rad. (0.012)
• SILICON NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)
2.54 ± 0.13 (0.10 ± 0.005)
3
0.76 ± 0.15 (0.03 ± 0.006)
2
1
• CECC SCREENING OPTIONS
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A=
0.31 rad. (0.012)
A 1.40 (0.055) max.
1.02 ± 0.10 (0.04 ± 0.004)
SOT23 CERAMIC (LCC1 PACKAGE)
Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector
APPLICATIONS:
Hermetically sealed surface mount version of the popular 2N2857 for high reliability applications requiring small size and low weight devices.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate above 25°C Operating and Storage Temperature Range 30V 15V 2.5V 40mA 200mW 1.14mW / °C 300mW 1.72mW / °C –65 to +200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
V(BR)CBO* V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE ICES NF hfe | hfe | Ccb Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off Current Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Collector – Emitter Cut-off Current Noise Figure Small Signal Current Gain Magnitude of hfe Collector – Base Feedback Capacitance Gpe rb’Cc Small Signal Power Gain Collector – Base Time Constant
SEME
2N2857CSM
Test Conditions
IC = 1µA IE = 10µA VCB = 15V IE = 0 IC = 10mA IB = 1mA VCE = 1V IC = 3mA VCB = 16V VCE = 6V f = 450MHz VCE = 6V VCE = 6V f = 100MHz VCB = 10V VCE = 6V f = 450MHz VCE = 6V f = 31.9MHz IE = 2mA IE = 0 IC = 1.50mA f = 0.1 to 1 MHz TA = 150°C IB = 0 IC = 1.5mA RG = 50Ω IC = 2mA IC = 5mA TA = –55°C IE = 0 IB = 0 IC = 0
Min.
30 15 2.5
Typ.
Max. Unit
V 50 1 0.4
Collector – Emitter Breakdown Voltage IC = 3mA
µA V —
0.5 30 10
1
100 4.5 50 10 220 21 1 12.5 4.0 21 15
nA dB — — pF dB ps
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
.