IXGR72N60B3H1

GenX3TM 600V IGBT w/ Diode (Electrically Isolated Tab) Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight 50/60 Hz, 1 Minute Mounting Force Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C (Limited by Leads) TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 3 Clamped Inductive Load TC = 25C IXGR72N60B3H1 VCES IC110 VCE(sat) tfi(typ) ISOPLUS247TM = = £ = 600V 40A 1.80V 92ns Maximum Ratings 600 600 20 30 75 40 34 450 ICM = 240 VCE  VCES 200 -55 ... +150 150 -55 ... +150 2500 20..120/4.5..27 300 260 5 W C C C V~ N/lb °C °C g Advantages       V V V V A A A A A  G C E Isolated Tab G = Gate E = Emitter C = Collector Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Optimized for Low Conduction and Switching Losses 2500V~ Electrical Isolation Square RBSOA Anti-Parallel Ultra Fast Diode Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250A, VCE = VGE TJ = 125C VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V IC = 60A, VGE = 15V, Note 1 IC = 120A Characteristic Values Min. Typ. Max. 3.0 5.0 300 5 V A mA nA V V        ...