IXGR72N60C3D1

GenX3TM 600V IGBT with Diode High-Speed Low-Vsat PT IGBT 40-100 kHz Switching IXGR72N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤£ = 600V 35A 2.7V 55ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL FC TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C Maximum Ratings 600 600 ±20 ±30 75 35 36 400 50 500 ICM = 150 VCE ≤ VCES 200 -55 ... +150 150 -55 ... +150 W °C °C °C V~ V~ N/lb °C °C g V V V V A A A A A mJ A ISOPLUS 247TM G C E Isolated Tab G = Gate E = Emitter C = Collector Features z z z z z z z 50/60 Hz, RMS, t = 1Minute IISOL < 1mA t = 20 Seconds Mounting Force Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s 2500 3000 20..120/4.5..27 300 260 5 Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode Avalanche Rated 2500V Electrical Isolation Advantages z z High Power Density Low Gate Drive Requirement Applications z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 50A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 300 5 ±100 2.10 1.65 ...