IXKH30N60C5

IXKH 30N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D ID25 = 30 A VDSS = 600 V RDS(on) max = 0.125 Ω TO-247 AD G G D S S q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Symbol TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C Conditions TVJ = 25°C Maximum Ratings 600 ± 20 30 21 708 1.2 50 V V A A mJ mJ V/ns Features fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density Applications Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating PDP and LCD adapter MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 110 2.5 TVJ = 25°C TVJ = 125°C 3 20 100 2500 120 53 12 18 15 5 50 5 0.4 70 max. 125 3.5 2 mΩ V µA µA nA pF pF nC nC nC ns ns ns ns K/W RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC VGS = 10 V; ID = 16 A VDS = VGS; ID = 1.1 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS = 0 to 10 V; VDS = 400 V; ID = 16 A 1) CoolMOS™ is a trademark of Infineon Technologies AG. VGS = 10 V; VDS = 400 V ID = 16 A; RG = 3.3 Ω IXYS reserves the right to change limits, test conditions and dimensions...