DatasheetsPDF.com

IXTA140P05T Dataheets PDF



Part Number IXTA140P05T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA140P05T DatasheetIXTA140P05T Datasheet (PDF)

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capabi.

  IXTA140P05T   IXTA140P05T



Document
TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA140P05T IXTP140P05T IXTH140P05T VDSS ID25 RDS(on) = = ≤ - 50V - 140A 9mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 50 - 50 ±15 ±25 -140 -120 - 420 - 70 1 298 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 6.0 V V V V A A A A J W °C °C °C °C °C Nm/lb.in. g g g z z G DS D (Tab) TO-247 (IXTH) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ± 15V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. - 50 - 2.0 - 4.0 V V z z z Easy to Mount Space Savings High Power Density ±100 nA -10 μA - 750 μ A 9 mΩ Applications z z z z z z VGS = -10V, ID = 0.5 • ID25, Note 1 High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100027C(01/13) © 2013 IXYS CORPORATION, All Rights Reserved Free Datasheet http://www.datasheet4u.com/ IXTA140P05T IXTP140P05T IXTH140P05T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 TO-247 0.50 0.21 VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = -10V, VDS = - 30V, ID = - 50A RG = 1Ω (External) VGS = 0V, VDS = - 25V, f = 1MHz VDS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 44 72 13.5 1640 640 28 34 38 25 200 50 65 S nF pF pF ns ns ns ns nC nC nC 0.42 °C/W °C/W °C/W 1 = Gate 2 = Drain 3 = Source TO-247 Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = - 70A, VGS = 0V, Note 1 IF = - 70A, -di/dt = -100A/μs VR = - 25V, VGS = 0V Characteristic Values Min. Typ. Max. -140 - 560 -1.3 53 58 - 2.2 A A V ns nC A TO-220 Outline Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain Pins: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6.


IXKH70N60C5 IXTA140P05T IXTP140P05T


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)