Document
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTA140P05T IXTP140P05T IXTH140P05T
VDSS ID25
RDS(on)
= = ≤
- 50V - 140A 9mΩ
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings - 50 - 50 ±15 ±25 -140 -120 - 420 - 70 1 298 -55 ... +150 150 -55 ... +150 300 260 1.13/10 2.5 3.0 6.0 V V V V A A A A J W °C °C °C °C °C Nm/lb.in. g g g
z z
G
DS
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ± 15V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C
Characteristic Values Min. Typ. Max. - 50 - 2.0 - 4.0 V V
z z z
Easy to Mount Space Savings High Power Density
±100 nA -10 μA - 750 μ A 9 mΩ
Applications
z z z z z z
VGS = -10V, ID = 0.5 • ID25, Note 1
High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications
DS100027C(01/13)
© 2013 IXYS CORPORATION, All Rights Reserved
Free Datasheet http://www.datasheet4u.com/
IXTA140P05T IXTP140P05T IXTH140P05T
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 TO-247 0.50 0.21 VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Resistive Switching Times VGS = -10V, VDS = - 30V, ID = - 50A RG = 1Ω (External) VGS = 0V, VDS = - 25V, f = 1MHz VDS = -10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 44 72 13.5 1640 640 28 34 38 25 200 50 65 S nF pF pF ns ns ns ns nC nC nC 0.42 °C/W °C/W °C/W
1 = Gate 2 = Drain 3 = Source
TO-247 Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = - 70A, VGS = 0V, Note 1 IF = - 70A, -di/dt = -100A/μs VR = - 25V, VGS = 0V
Characteristic Values Min. Typ. Max. -140 - 560 -1.3 53 58 - 2.2 A A V ns nC A TO-220 Outline
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
Pins:
1 - Gate 3 - Source
2 - Drain
Pins: 1 - Gate 2,4 - Drain 3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6.