Power MOSFET
TrenchT2TM GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN600N04T2
VDSS ID...
Description
TrenchT2TM GigaMOSTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTN600N04T2
VDSS ID25
= =
RDS(on) ≤
40V 600A 1.3mΩ
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 40 40 ±20 600 200 1800 200 3 940 -55 ... +175 175 -55 ... +175 V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g
G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second
300 260 2500 3000 1.5/13 1.3/11.5 30
Features
z z
Mounting Torque Terminal Connection Torque
z z z z z z
International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 40 1.5 3.5 ±200 V V nA
z z z
Easy to Mount Space Savings High Power Den...
Similar Datasheet