IXTY64N055T

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP64N055T IXTY64N055T VDSS ID25 = = RDS(on) ≤ 55 V 64 A 13 mΩ TO-220 (IXTP) G D (TAB) D S Symbol V DSS VDGR VGSM ID25 IL IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TO-252 TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 18 Ω TC = 25°C Maximum Ratings 55 55 ± 20 64 25 170 10 250 3 130 -55 ... +175 175 -55 ... +175 V V V A A A A mJ V/ns W °C °C °C °C °C TO-252 (IXTY) G S D (TAB) D = Drain TAB = Drain G = Gate S = Source Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 °C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220) TO-220 TO-252 300 260 1.13 / 10 Nm/lb.in. 3 0.35 g g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 25 μA VGS = ± 20 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max...