RJK5032DPD

Preliminary Datasheet RJK5032DPD 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. S D G 12 3 Gate Drain Source Drain Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. STch = 25C, Tch  150C 3. Value at Tc = 25C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note2 IAP Note2 EAR Pch Note 3 ch-c Tch Tstg Note1 Value 500 30 3 6 3 6 3 0.5 40.3 3.1 150 –55 to +150 Unit V V A A A A A mJ W C/W C C R07DS0836EJ0200 Rev.2.00 Aug 08, 2012 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ RJK5032DPD Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to so...