RJK5036DP3-A0

Preliminary Datasheet RJK5036DP3-A0 500V - 2.4A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting R07DS0840EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSP0004ZB-A Package name: SOT-223 D 4 3 2 1 S G 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel temperature Storage temperature Symbol VDSS VGSS Note1 ID ID (pulse) Note1 IDR Note2 IDR (pulse) Tch Tstg Note2 Ratings 500 ±30 2.4 4.8 2.4 4.8 150 –55 to +150 Unit V V A A A A C C Notes: 1. Limited Tch max.. Value at Tc = 25C 2. Pulse width limited by safe operating area. R07DS0840EJ0100 Rev.1.00 Jul 05, 2011 Page 1 of 3 Free Datasheet http://www.datasheet4u.com/ RJK5036DP3-A0 Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF Min 500 — — 3.0 — — — — — — — — — Typ — — — — 3.83 16...