RJK6002DJE

Preliminary Datasheet RJK6002DJE 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 32 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. Pulse width limited by safe operating area. Symbol VDSS VGSS ID Note1 ID (pulse)Note3 IDR Note1 IDR (pulse)Note3 Pch Note2 ch-a Tch Tstg Ratings 600 30 2 4 2 4 0.9 139 150 –55 to +150 Unit V V A A A A W C/W C C R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Page 1 of 3 Free Datasheet http://www.datasheet4u.com/ RJK6002DJE Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS IDSS IGSS VGS(of...