MOS FET
Preliminary Datasheet
RJK6015DPM
600V - 21A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) =...
Description
Preliminary Datasheet
RJK6015DPM
600V - 21A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.315 typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2.00 Jun 21, 2012
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
D
G
1. Gate 2. Drain 3. Source
S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. PW 10 s, duty cycle 1% Value at Tc = 25C STch = 25C, Tch 150C Limited by maximum safe operation area Symbol VDSS VGSS IDNote4 ID (pulse)Note1 IDR IDR (pulse)Note1 IAP Note3 EAR Pch Note2 ch-c Tch Tstg
Note3
Ratings 600 ±30 21 63 21 63 6 1.9 60 2.08 150 –55 to +150
Unit V V A A A A A mJ W C/W C C
R07DS0438EJ0200 Rev.2.00 Jun 21, 2012
Page 1 of 6
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RJK6015DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off...
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