2SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI...
2SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Applications
Switching
regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 600 V 600 A Continuous drain current ±16 A Pulsed drain current ±64 V Gate-source voltage ±30 A Repetitive or non-repetitive 16 mJ Maximum avalanche energy 242.7 kV/μ s Maximum drain-source dV/dt 20 kV/μ s Peak diode recovery dV/dt 5 Max. power dissipation 2.02 W 270 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.74mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch< =150°C < 600V *5 VGS=-30V *3 IF< = BVDSS, Tch < = 150°C *4 VDS = = -ID, -di/dt=50A/μs, Vcc < Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer cap...
