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IKA06N60T Dataheets PDF



Part Number IKA06N60T
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet IKA06N60T DatasheetIKA06N60T Datasheet (PDF)

IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs G Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - .

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IKA06N60T ^ TrenchStop series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs G Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC;Tc=100°C 6A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K06T60 E P-TO-220-3-31 (TO-220 FullPak) Type IKA06N60T Package TO-220-FP Ordering Code Q67040S4678 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction temperature Storage temperature Tj Tstg -40...+175 -55...+175 °C 1) Symbol VCE IC Value 600 12 6 Unit V A ICpuls IF 18 18 12 6 IFpuls VGE tSC Ptot 18 ±20 5 28 V µs W VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Oct-04 Free Datasheet http://www.datasheet4u.com/ Power Semiconductors IKA06N60T ^ TrenchStop series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 25 mA VCE(sat) V G E = 15V, I C = 6A T j = 25 ° C T j = 17 5 ° C Diode forward voltage VF V G E = 0V, I F = 6A T j = 25 ° C T j = 17 5 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 18 mA, VCE=VGE V C E = 600V , V G E = 0V T j = 25 ° C T j = 17 5 ° C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E = 2 0V V C E = 20V, I C = 6A 3.6 none 40 700 100 nA S Ω µA 4.1 1.6 1.6 4.6 2.05 5.7 1.5 1.8 2.05 600 V Symbol Conditions Value min. typ. max. Unit RthJA 80 RthJCD 6.5 RthJC 5.3 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Rev. 2 Oct-04 Free Datasheet http://www.datasheet4u.com/ IKA06N60T ^ TrenchStop series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V, t S C ≤ 5 µ s V C C = 400V, T j = 25 ° C 55 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = 6A V G E = 1 5V P -T O - 2 20- 3- 31 7 nH 368 28 11 42 nC pF Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 25 ° C, V R = 4 00V, I F = 6A, di F / dt = 55 0A / µ s 123 190 5.3 450 ns nC A A/µs td(on) tr td(off) tf Eon Eoff Ets T j = 25 ° C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , RG=23Ω, L σ 2 ) = 6 0nH , C σ 2 ) =40pF Energy losses include “tail” and diode reverse recovery. 9.4 5.6 130 58 0.09 0.11 0.2 mJ ns Symbol Conditions Value min. Typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2 Oct-04 Free Datasheet http://www.datasheet4u.com/ Power Semiconductors IKA06N60T ^ TrenchStop series Switching Characteristic, Inductive Load, at Tj=175 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T j = 17 5 ° C V R = 4 00V, I F = 6A, di F / dt = 55 0A / µ s 180 500 7.6 285 ns nC A A/µs td(on) tr td(off) tf Eon Eoff Ets T j = 17 5 ° C, V C C = 4 00V, I C = 6A , V G E = 0/ 1 5V , R G = 23 Ω L σ 1 ) = 6 0nH , C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. 8.8 8.2 165 84 0.


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