UD606

UNISONIC TECHNOLOGIES CO., LTD UD606 DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) Power MOSFET  DESCRIPTION The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inverters and other applications.  FEATURES * N-Channel: 40V/8A RDS(ON) ≤ 33 mΩ @ VGS =10V, ID=8.0A RDS(ON) ≤ 55 mΩ @ VGS= 4.5V, ID=6.0A * P-Channel: -40V/-8A RDS(ON) ≤ 50 mΩ @ VGS= -10V, ID=-8.0A RDS(ON) ≤ 70 mΩ @ VGS= -4.5V, ID=-4.0A * Super high dense cell design * Reliable and rugged  SYMBOL 1 1 SOP-8 TO-252-5 PDFN5×6  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UD606L-TN5-R UD606G-TN5-R TO-252-5 UD606L-S08-R UD606G-S08-R SOP-8 UD606L-P5060-R UD606G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source 12 Pin Assignment 3 45678 Packing S1 G1 D1/D2 S2 G2 - - - Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 11 QW-R502-169.E UD606  MARKING PACKAGE TO-252-5 SOP-8 PDFN5×6 MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 11 QW-R502-169.E UD606 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) N-Channel: PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note3) Pulsed Drain Current (Note3) Power Dissipation Junction Temperature Storage Temperature TC=25°C TC=25°C TO-252-5 SOP-8...