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DB2J20600L

Panasonic

Silicon epitaxial planar type

Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L DB2J20600L Silicon epitaxial pla...


Panasonic

DB2J20600L

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Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L DB2J20600L Silicon epitaxial planar type For high frequency rectification DB2X206 in SMini2 type package  Features  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Unit: mm 1.25 0.35 2 0.13  Marking Symbol: D3 0.5 1.7 2.5 0.7  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Cathode 2. Anode Panasonic JEITA Code SMini2-F5-B SC-90A ―  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current Junction temperature *1 Operating ambient temperature Storage temperature Note: Rating 20 20 1 2 150 -40 to +85 -55 to +150 Unit V V A A °C °C °C *2 VR VRRM IF(AV) IFSM Tj Topr Tstg Internal Connection 2 *1 Tl = 80 °C *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) 1 Page 1 of 4 Established : 2011-06-14 Revised : 2013-04-20 Free Datasheet http://www.datasheet4u.com/ Doc No. TT4-EA-13097 Revision. 2 Product Standards Schottky Barrier Diode DB2J20600L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time VF IR Ct trr Conditions IF = 1.0 A VR = 20 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR Min Typ 20 6 Max 0.45 100 Unit V μA pF ns *1 N...




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