Silicon epitaxial planar type
DB2J209
Silicon epitaxial planar type
For high frequency rectification DB3X209K in SMini2 type package Features
Short...
Description
DB2J209
Silicon epitaxial planar type
For high frequency rectification DB3X209K in SMini2 type package Features
Short reverse recovery time trr Low forward voltage VF Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm
Marking Symbol: BE Packaging
DB2J20900L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 500 3 125 –55 to +125 Unit V V mA A °C °C
1: Cathode 2: Anode Panasonic JEITA Code SMini2-F5-B SC-90A
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF1 VF2 IR Ct trr IF = 10 mA IF = 500 mA VR = 10 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 7 2.4 Conditions Min Typ Max 0.3 0.5 30 Unit V V µA pF ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 400 MHz *: trr measurement circuit
Bias...
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