switching transistors. 2N2907 Datasheet

2N2907 transistors. Datasheet pdf. Equivalent

Part 2N2907
Description PNP switching transistors
Feature DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product speci.
Manufacture NXP
Datasheet
Download 2N2907 Datasheet



2N2907
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2907; 2N2907A
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 30



2N2907
Philips Semiconductors
PNP switching transistors
Product specification
2N2907; 2N2907A
FEATURES
High current (max. 600 mA)
Low voltage (max. 60 V).
APPLICATIONS
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
MAM263
3
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
collector-base voltage
collector-emitter voltage
2N2907
2N2907A
IC collector current (DC)
Ptot total power dissipation
hFE DC current gain
fT transition frequency
toff turn-off time
CONDITIONS
MIN.
open emitter
open base
Tamb 25 °C
IC = 150 mA; VCE = 10 V
100
IC = 50 mA; VCE = 20 V; f = 100 MHz
200
ICon = 150 mA; IBon = 15 mA; IBoff = 15 mA
MAX. UNIT
60 V
40
60
600
400
300
300
V
V
mA
mW
MHz
ns
1997 May 30
2





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