SIGNAL TRANSISTORS. 2N2907 Datasheet

2N2907 TRANSISTORS. Datasheet pdf. Equivalent

Part 2N2907
Description 1.8W PNP GENERAL PURPOSE SAMLL SIGNAL TRANSISTORS
Feature 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon .
Manufacture STMicroelectronics
Datasheet
Download 2N2907 Datasheet



2N2907
2N2905
2N2907
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905 and 2N2907 are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905) and in Jedec TO-18 (for 2N2907) metal
case. They are designed for high speed saturated
switching and general purpose application.
2N2905 approved to CECC 50002-102,
2N2907 approved to CECC 50002-103
available on request.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tamb 25 oC
for 2N2905
for 2N2907
at Tcase 25 oC
for 2N2905
for 2N2907
St orage Temperature
Max. Operating Junction Temperature
November 1997
Value
-60
-40
-5
-0.6
0.6
0.4
3
1.8
-65 to 200
200
Unit
V
V
V
A
W
W
W
W
oC
oC
1/5



2N2907
2N2905/2N2907
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
M ax
Max
TO-39
58.3
292
TO -18
97.3
437.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
VCB = -50 V
Tc ase = 150 oC
ICEX Collect or Cut-off
Current (VBE = -0.5V)
IBEX Base Cut-off Current
(VBE = -0.5V)
V( BR)CBO Collect or-Base
Breakdown Voltage
(IE = 0)
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitt er-Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collect or-Emitter
Saturation Voltage
VCE = -30 V
VCE = -30 V
IC = -10 µA
IC = -10 mA
IE = -10 µA
IC = -150 mA
IC = -500 mA
IB = -15 mA
IB = -50 mA
VBE(s at)Base-Emitt er
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFEDC Current G ain
IC = -0.1 mA
IC = -1 mA
IC = -10 mA
IC = -150 mA
IC = -500 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT
CEBO
Transition F requency
Emitter Base
Capacitance
VCE = -20 V f = 100 MHz
IC = -50 mA
IC = 0 VEB = -2 V f = 1MHz
CCBO
Collector Base
Capacitance
IE = 0 VCB = -10 V f = 1MHz
td Delay Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
tr Rise Time
VCC = -30 V IC = -150 mA
IB1 = -15 mA
ts Storage Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
tf Fall Time
VCC = -6 V IC = -150 mA
IB1 = -IB2 = -15 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1 %
Min. Typ.
-60
-40
-5
35
50
75
100
30
200
M a x.
-20
-20
-50
-50
-0.4
-1.6
-1.3
-2.6
300
30
8
10
40
80
30
Unit
nA
µA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
2/5





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