FDMC8030

FDMC8030 Dual N-Channel Power Trench® MOSFET August 2011 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A „ Max rDS(on) = 28 mΩ at VGS = 3.2 V, ID = 4 A „ Termination is Lead-free and RoHS Compliant General Description This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance. Applications „ Battery Protection „ Load Switching „ Point of Load Pin 1 G1 S1 S1 S1 G2 D1 D2 S2 S2 Bottom Drain2 Contact 8 7 6 5 Q2 1 G1 2 S1 3 S1 4 S1 Q1 G2 S2 S2 S2 Power 33 S2 Bottom Drain1 Contact MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 3) (Note 1a) (Note 1b) TA = 25 °C (Note 4) (Note 1a) Ratings 40 ±12 12 50 21 1.9 0.8 -55 to +150 Units V V A mJ W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 65 155 °C/W Package Marking and Ordering Information Device Marking FDMC8030 Device FDMC8030 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Fairchild Semiconductor Corporation FDMC8030...