N-Channel MOSFET. FDMC86240 Datasheet

FDMC86240 Datasheet PDF, Equivalent


Part Number

FDMC86240

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMC86240 Datasheet PDF


FDMC86240 Datasheet
July 2010
FDMC86240
N-Channel Power Trench® MOSFET
150 V, 16 A, 51 mΩ
Features
General Description
„ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
„ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
„ Low Profile - 1 mm max in Power 33
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC - DC Conversion
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
D
D
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
150
±20
16
19
4.6
20
34
40
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC86240
Device
FDMC86240
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC86240 Rev.C
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

FDMC86240 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 120 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
150 V
101 mV/°C
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 4.6 A
VGS = 6 V, ID = 3.9 A
VGS = 10 V, ID = 4.6 A, TJ = 125 °C
VDS = 10 V, ID = 4.6 A
2.0
2.9
-9
44.7
51.4
84.5
15
4.0 V
mV/°C
51
70 mΩ
97
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 75 V, VGS = 0 V,
f = 1 MHz
680 905 pF
79 105 pF
4.3 10 pF
0.5 Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 75 V, ID = 4.6 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 5 V
VDD = 75 V,
ID = 4.6 A
8.2 17 ns
1.7 10 ns
14 26 ns
3.1 10 ns
11 15 nC
6 9 nC
2.8 nC
2.3 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 4.6 A
VGS = 0 V, IS = 2 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 4.6 A, di/dt = 100 A/μs
0.79 1.3
0.75 1.2
V
58 93 ns
63 102 nC
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
53 °C/W when mounted on a
1 in2 pad of 2 oz copper
125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 4.8 A, VDD = 150 V, VGS = 10 V.
FDMC86240 Rev.C
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/


Features Datasheet pdf FDMC86240 N-Channel Power Trench® MOSFE T July 2010 FDMC86240 N-Channel Power Trench® MOSFET 150 V, 16 A, 51 mΩ Fe atures „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 m Ω at VGS = 6 V, ID = 3.9 A „ Low Prof ile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant General Descr iption This N-Channel MOSFET is produce d using Fairchild Semiconductor‘s adv anced Power Trench® process that has b een especially tailored to minimize the on-state resistance and yet maintain s uperior switching performance. Applica tion „ DC - DC Conversion Top Pin 1 S S S G Bottom D D D D D D D 8 1 S 5 6 7 4 3 2 G S S D MLP 3.3x3.3 MOSFET M aximum Ratings TA = 25 °C unless other wise noted Symbol VDS VGS Parameter Dra in to Source Voltage Gate to Source Vol tage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limit ed) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Di ssipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °.
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